insulated gate bipolar transistor

[ˈinsjuleitid ɡeit baɪˈpəʊlə trænˈsistə]
  • 释义

    绝缘栅双极晶体管;

数据更新时间:2025-11-14 09:18:32
1、

The system adopted insulated gate bipolar transistor ( IGBT) as its main circuit and pulse-width modulating ( PWM) technology.

该系统采用IGBT(绝缘栅双极型晶体管)器件,PWM(脉宽调制)控制技术。

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2、

Insulated Gate Bipolar Transistor ( IGBT ) as controllable switch, has been applied widely.

绝缘栅双极二级管 ( IGBT ) 作为一种可控开关, 获得了广泛应用.

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3、

In recent years the Insulated Gate Bipolar Transistor ( IGBT) has been widely used in modern power electronic technology.

近些年,绝缘栅双极型晶体管(IGBT)在现代电力电子技术中应用广泛。

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4、

The implementation of this method is also studied. Simulation model of IGBT ( Insulated Gate Bipolar Transistor) series resonant inverter based on MATLAB/ Simulink is established.

以MATLAB/Simulink为仿真工具,建立了以IGBT(绝缘栅双极型晶体管)为开关器件的串联型逆变器仿真模型,对提出的定角控制方法进行了仿真验证。

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5、

The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.

本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术,以及它们的应用。

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6、

The high speed insulated gate bipolar transistor ( IGBT) transport model is derived by ambipolar transport theory in this paper.

借助双极传输理论导出了高速绝缘栅双极晶体管(IGBT)传输特性的物理模型。

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7、

A method to simulate the characteristics of insulated gate bipolar transistor ( IGBT) with PSPICE program is proposed in this paper.

提出了一种用PSPICE程序模拟绝缘栅双极型晶体管(IGBT)特性的方法。

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